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Avago introduces high-gain linear power amplifier for 4G LTE cellular infrastructure equipment
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News
Anglia scoops Mitsubishi HF semiconductor distributor award
12 September 2011
Wisbech, UK, 12 September 2011 – Anglia Components today announced that it has been awarded the Mitsubishi Electric Europe Distributor Award 2011 for sales of High Frequency Semiconductor Components.
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Wisbech, UK, 12 September 2011 – Anglia Components today announced that it has been awarded the Mitsubishi Electric Europe Distributor Award 2011 for sales of High Frequency Semiconductor Components.
Click here to read the rest of this article.
Mitsubishi’s new 12.5V high power MOSFET modules for commercial 2-way radios
26 November 2010
Mitsubishi Electric has introduced two new MOSFET devices, the RD70HUF2 and RD35HUF2, designed for use as high frequency power amplifiers in 2-way commercial radios operating at 25W and 50W respectively.
Click here to read the rest of this article.
Mitsubishi Electric has introduced two new MOSFET devices, the RD70HUF2 and RD35HUF2, designed for use as high frequency power amplifiers in 2-way commercial radios operating at 25W and 50W respectively.
Click here to read the rest of this article.
Mitsubishi’s low-noise GaAs HEMT for 12 - 20GHz range
18 March 2010
Mitsubishi has introduced the MGF4921AM, a low noise GaAs HEMT (High Electron Mobility Transistor) that is highly suitable for low noise amplifiers in satellite digital radio receivers.
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Mitsubishi has introduced the MGF4921AM, a low noise GaAs HEMT (High Electron Mobility Transistor) that is highly suitable for low noise amplifiers in satellite digital radio receivers.
Click here to read the rest of this article.
Mitsubishi's low-noise GaAs HEMT for Ka band
11 January 2010
Mitsubishi has introduced a new plastic packaged GaAs HEMT (High Electron Mobility Transistor), which is suitable for low noise amplifiers in the Ka frequency Band.
Click here to read the rest of this article.
Mitsubishi has introduced a new plastic packaged GaAs HEMT (High Electron Mobility Transistor), which is suitable for low noise amplifiers in the Ka frequency Band.
Click here to read the rest of this article.
Mitsubishi Electric launches a power amplifier for WiMAX terminal applications
12 March 2009
Mitsubishi has launched a high power amplifier featuring InGaP HBTs (Heterojunction Bipolar Transistors) tailored specifically for WiMAX terminal applications, providing up to 30dBm of output power in the frequency range 2.5GHz to 2.7GHz.
Click here to read the rest of this article.
Mitsubishi has launched a high power amplifier featuring InGaP HBTs (Heterojunction Bipolar Transistors) tailored specifically for WiMAX terminal applications, providing up to 30dBm of output power in the frequency range 2.5GHz to 2.7GHz.
Click here to read the rest of this article.
Mitsubishi releases a new 50W GaAs FET high power amplifier for WiMAX base stations
27 March 2008
Mitsubishi Electric Corporation has announced the introduction of their new 50W GaAs FET amplifier, the MGFC47B3538B, which offers greater performance with less power consumption in 3.6GHz WiMAX Base Station applications.
Click here to read the rest of this article.
Mitsubishi Electric Corporation has announced the introduction of their new 50W GaAs FET amplifier, the MGFC47B3538B, which offers greater performance with less power consumption in 3.6GHz WiMAX Base Station applications.
Click here to read the rest of this article.
